- gas plasma etching
- Микроэлектроника: газоплазменное травление
Универсальный англо-русский словарь. Академик.ру. 2011.
gas plasma etching
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Plasma etching — is a form of plasma processing used to fabricate integrated circuits. It involves a high speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be… … Wikipedia
Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… … Wikipedia
Plasma cleaning — involves the removal of impurities and contaminants from surfaces through the use of an energetic plasma created from gaseous species. Gases such as argon and oxygen, as well as mixtures such as air and hydrogen/nitrogen are used. Lower energy… … Wikipedia
Plasma (physics) — For other uses, see Plasma. Plasma lamp, illustrating some of the more complex phenomena of a plasma, including filamentation. The colors are a result of relaxation of electrons in excited states to lower energy states after they have recombined… … Wikipedia
Plasma-unterstütztes Ätzen — (physikalisch chemisches Ätzen) bezeichnet eine Gruppe von subtraktiven (abtragenden) Mikrostrukturverfahren in der Halbleitertechnologie. Als Trockenätzverfahren stellen sie alternative Strukturierungsverfahren zum sog. Nassätzen (nasschemischen … Deutsch Wikipedia
Plasma etcher — A plasma etcher, or etching tool, is a tool used in the production of semiconductor devices. Plasma etcher produces a plasma from a process gas, typically oxygen or a fluorine bearing gas, using a high frequency electric field, typically 13.56… … Wikipedia
Plasma-Ätzen — Plasmaätzen ist ein materialabtragendes, plasmaunterstütztes, gaschemisches Trockenätz Verfahren, das besonders in der Halbleitertechnik, Mikrostrukturtechnologie und in der Displaytechnik großtechnisch eingesetzt wird. Der Begriff Plasmaätzen… … Deutsch Wikipedia
Capacitively coupled plasma — A capacitively coupled plasma (CCP) is one of the most common types of industrial plasma sources. It essentially consists of two metal electrodes separated by a small distance, placed in a reactor. The gas pressure in the reactor can be lower… … Wikipedia
Inductively coupled plasma — An inductively coupled plasma (ICP) is a type of plasma source in which the energy is supplied by electrical currents which are produced by electromagnetic induction, that is, by time varying magnetic fields. [A. Montaser and D. W. Golightly, eds … Wikipedia
Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… … Wikipedia
Dry etching — refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes… … Wikipedia
